Semiconductor lasers are solid-state lasers based on semiconductor gain media, where optical amplification is usually achieved by stimulated emission at an interband transition under conditions of a high carrier density in the conduction band.
Principle: When a p-n junction diode is forward biased, the electrons from n – region and the holes from the p- region cross the junction and recombine with each other.
During the recombination process, the light radiation (photons) is released from a certain specified direct band gap semiconductors like Ga-As.
In September 1962 researchers from IBM, independently and almost simultaneously with researchers from General Electric and MIT's Lincoln Laboratory, demonstrated laser action in the semiconductor gallium arsenide.
General Electric researcher Robert Hall developed one of these lasers in 1962.