[PDF] INFORMATIONS IMPLANTATION - Anciens Et Réunions

What are the different implantation techniques?

• Of the 4 implantation techniques used, the 3-incision technique with subcutaneous implantation of the pulse generator and submuscular implantation were used in both hospitals. The 2-incision technique with subcutaneous implantation of the

What are ion implantation energies?

• Ion implantation energies range from several hundred to several million electron volts, resulting in ion distributions with average depths from < 10 nm to 10 . Doses range from 1011 atoms/cm2 for threshold adjustment to 1018 atoms/cm2 for buried dielectric formation.

Why is the substrate kept near 600oC during implantation?

• Hence, the substrate is kept near 600oC during implantation so that self-annealing maintains the crystal integrity. Each incident oxygen ion sputters on the order of 0.1 silicon atom, and so the large number of implanted oxygen ions erode many layers of silicon atoms.

How ion implantation is used in MOS transistors?

• For instance, in MOS transistors, ion implantation can be used to accurately adjust the threshold voltage. In ion implantation, dopant atoms are volatilized, ionized, accelerated, separated by the mass-to-charge ratios, and directed at a target that is typically a silicon substrate.