PDF Ion Beam Services IMC-200 PDF

IMC-200 Series IBS Research & Production Ion Implanters

Fax: +33 (0)4 42 53 89 59. Email: information@ion-beam-services.fr. Web: www.ion-beam-services.com. IMC-200 Series. IBS Research & Production.

Tailoring morphology in titania nanotube arrays by implantation

Ion implantation. Implantation of mass separated 12C ions was realized using an IMC-200 ion implanter (Ion Beam Services.

Advances in Plasma Doping on FinFETS and other Applications

Ion Beam Services -Implant Specialists for 24 Years Implant Services Implant Outsourcing

INDUSTRY GUIDE TO TECHNION

FEI Strata 400s Dual Beam FIB. 151. Zeiss Ultra-Plus FEG-SEM. 151. FEI E-SEM Quanta 200. 151 X-Ray Diffraction Laboratory. 153 Mathematics.

?????? ???????????

????????? ????? IMC-200 ????????????? ?????????? ????????? Ion Beam Services ???????????? ??? ??? ??????? ???????????????? ?????

Exhibition Guide

Be recognized for having the most innovative product in 200 Sputtering DC Magnetron Sputtering

Ion-Beam Neutralization Kaufman & Robinson Inc. The Ion Beam

Experimentally the potential in an ion beam rises when there is a deficiency of electrons. At a potential relative to surrounding hardware of roughly 200 V 

Li intercalation into multilayer graphene with controlled defect

An ion implanter IMC-200 from Ion Beam Services was used to implant Ar+ ions at the energy of 190 keV. Raman spectroscopy.

IBS - Innovative ion implant

Ion implantation equipements and processes surface frank.torregrosa@ion-beam-services.fr ... IMC / FLEXion : for R&D and production.

Review of Industrial Accelerators and Their Applications

Cyclotrons – ion energies from 10 to 70 MeV at beam currents to several mA. Ion Implantation Accelerator Sales. 0. 100. 200 ... Sciaky Inc. (USA).

Agilent 6550 iFunnel Q-TOF LC/MS System Breakthrough iFunnel Techn

IMC 200 Series Schneider PLC Automation Management • Widely used in automotive food & pharmaceutical industry • Higher reliability than PC based control Easy maintenance • TCP/IP internal network with DHCP server for modules communications & self configuration • Only one type of analog and digital boards throughout the system for

ION IMPLANTER : IMC 200 MAIN CHARACTERISTICS OPERATIONS - LAAS

ION IMPLANTER : IMC 200 Ion implantation is use for doping in semi conductors applications and surface activation for microsystems applications MAIN CHARACTERISTICS y Beam courant from a few µA to 2 mA y Accelerating voltage from 5 to 200 KV y Up to 125 atomic mass y Implant species : B P As O2 Ar Mg Ge Si y 1 cm 2

Searches related to ion beam services imc 200 PDF

beam 2 stage deceleration 2nd Magnet Closed loop dose/angle control Simple 1D mechanical scan Energy Range 200eV-60keV Dose Range 1E13 – 5E16 Max Throughput 350 WPH Mass Analysis Magnet Deceleration Lens Indirectly Heated Cathode (IHC) Source Rotating Single Wafer Platen +/- 60 ° tilt Mass Resolving Slit Deceleration Lens Beam Precision

• Characteristics

  Implanter Varian CF3000 modified