LT5512 1kHz-3GHz High Signal Level Active Mixer - Analog Devices

113490_35512fa.pdf

LT5512

1

5512fa

1kHz-3GHz High Signal Level

Active Mixer

The LT

®

5512 is an active double-balanced mixer IC, op-

timized for high linearity HF, VHF and UHF applications. The IC includes an integrated LO buffer amplifi er to drive the mixer and an RF buffer amplifi er for improved LO-RF isolation. Internal bias circuits eliminate the need for precision external resistors and allow the device to be powered-down using the enable control (EN) pin. The externally matched RF and IF ports allow the mixer to be used at very low frequencies, below 1MHz or up to

3GHz. The differential LO input is designed for single-ended

or a differential input drive. The LT5512 is a high-linearity alternative to passive diode mixers. Unlike passive mixers, which have conversion loss and require high LO drive levels, the LT5512 deliv- ers conversion gain and requires signifi cantly lower LO drive levels. ■ HF/VHF/UHF Mixer ■ Cellular/PCS/UMTS Infrastructure ■ High Linearity Mixer Applications ■ ISM Band Receivers ■ Wireless Medical Telemetry System (WMTS) ■ Broadband RF, LO and IF Operation ■ High Input IP3: >20dBm from 30MHz to 900MHz +17dBm at 1900MHz ■ Typical Conversion Gain: 1dB ■ SSB Noise Figure: 11dB at 900MHz

14dB at 1900MHz

■ Integrated LO Buffer: Insensitive to LO Drive Level ■ Single-Ended or Differential LO Drive ■ High LO-RF Isolation ■ Enable Function ■ 4.5V to 5.25V Supply Voltage Range ■ 4mm × 4mm QFN Package High Signal-Level Downmixer for 600MHz Wireless Medical Telemetry System

APPLICATIO S

U

FEATURESDESCRIPTIO

U

TYPICAL APPLICATIO

U , LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.

5512 TA01

RF + RF-LO + LO- IF + IF- 8:1

LT5512

1.8pF

0.01μF0.01μF0.01μF

IF OUT 45MHz

50Ω

BIAS

1μF

6.8nH 6.8pF 6.8nH 47nH
EN 5VV CC

4.5V TO 5.25V6.8pF

RF IN

608MHz

TO 614MHz

50Ω

LO IN -5dBm TYP

100Ω

EN V CC2 V CC1

LO POWER (dBm)-111

G C , SSB NF (dB), IIP3 (dBm)

LO LEAKAGE (dBm)

5913
-9 -7-5 -3

5512 TA01a

-1 1721
-80 -60-40-20020 3

7111519

1 G C IIP3

SSB NF

LO-IF LO-RF T A = 25°C

RF = 610MHz

HIGH-SIDE LO

IF = 45MHz

Conv Gain, IIP3, NF and

LO Leakage vs LO Power

LT5512

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Supply Voltage (V

CC1 , V CC2 , IF + , IF - ) ........................5.5V Enable Voltage .................................-0.3V to V CC + 0.3V LO + to LO - Differential Voltage ..............................±1.5V ....................................................(+6dBm equivalent) RF + to RF - Differential Voltage ...............................±0.7V ..................................................(+11dBm equivalent) Operating Temperature Range .................-40°C to 85°C Storage Temperature Range ...................-65°C to 125°C

Junction Temperature (T

J ) ....................................125°C (Note 1) (Test Circuit Shown in Figure 2) V CC = 5V, EN = High, T A = 25°C (Note 3), unless otherwise noted.

PARAMETER CONDITIONS MIN TYP MAX UNITS

Enable (EN) Low = Off, High = On

Turn On Time3■s

Turn Off Time13■s

Input Current V

ENABLE

= 5V 50■A

Enable = High (On)3V

Enable = Low (Off)0.3 V

Power Supply Requirements (V

CC )

Supply Voltage4.5 5.25 V

Supply Current56 74 mA

Shutdown Current EN = Low 100■A

ABSOLUTE AXI U RATI GS

WWWU

PACKAGE/ORDER I FOR ATIO

UUW

16151413

5678TOP VIEW

UF PACKAGE

16-LEAD (4mm × 4mm) PLASTIC QFN

EXPOSED PAD IS GROUND (PIN 17)

(MUST BE SOLDERED TO PCB)

9101112

4 3 21NC
RF + RF - NCGND IF + IF - GND NC LO + LO - NCEN V CC1 V CC2 NC 17

ORDER PART NUMBER PART MARKING

LT5512EUF 5512

Order Options Tape and Reel: Add #TR

Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF

Lead Free Part Marking:

http://www.linear.com/leadfree/ Consult LTC Marketing for parts specifi ed with wider operating temperature ranges.

DC ELECTRICAL CHARACTERISTICS

AC ELECTRICAL CHARACTERISTICS

PARAMETER CONDITIONS MIN TYP MAX UNITS

RF Input Frequency Range Requires Appropriate Matching 0.001 to 3000 MHz LO Input Frequency Range Requires Appropriate Matching 0.001 to 3000 MHz IF Output Frequency Range Requires Appropriate Matching 0.001 to 2000 MHz

LO Input Power 1kHz to 1700MHz (Resistive Match)

1200MHz to 3000MHz (Reactive Match)-11

-18-5 -101 -2dBmdBm T JMAX = 125°C, ? JA = 37°C/W

LT5512

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Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: 45MHz, 140MHz and 450MHz performance measured on the test circuit shown in Figure 1. 900MHz, 1900MHz and 2450MHz performance measured on the test circuit shown in Figure 2.

AC ELECTRICAL CHARACTERISTICS

PARAMETER CONDITIONS MIN TYP MAX UNITS

Conversion Gain RF = 45MHz, IF = 2MHz

RF = 140MHz, IF = 10MHz

RF = 450MHz, IF = 70MHz

RF = 900MHz, IF = 170MHz

RF = 1900MHz, IF = 170MHz

RF = 2450MHz, IF = 240MHz...112

1.1 0 1

2dBdBdBdBdBdB

Conversion Gain vs Temperature T

A = ...40°C to 85°C, RF = 900MHz ...0.011 dB/°C

Input 3rd Order Intercept RF = 45MHz, IF = 2MHz

RF = 140MHz, IF = 10MHz

RF = 450MHz, IF = 70MHz

RF = 900MHz, IF = 170MHz

RF = 1900MHz, IF = 170MHz

RF = 2450MHz, IF = 240MHz20.420.721.3

21
17

13dBmdBmdBmdBmdBmdBm

Single-Sideband Noise Figure RF = 140MHz, IF = 10MHz

RF = 450MHz, IF = 70MHz

RF = 900MHz, IF = 170MHz

RF = 1900MHz, IF = 170MHz

RF = 2450MHz, IF = 240MHz10.310.3

11 14

13.4dBdBdBdBdB

LO to RF Leakage f

LO = 250kHz to 700MHz (Figure 1) f LO = 700MHz to 2500MHz (Figure 2) ...63 ...50dBmdBm

LO to IF Leakage f

LO = 250kHz to 500MHz (Figure 1) f LO = 500MHz to 1250MHz (Figure 1) f LO = 700MHz to 1500MHz (Figure 2) f LO = 1500MHz to 1950MHz (Figure 2) f LO = 1950MHz to 2500MHz (Figure 2) ...35 ...40 ...45 ...40 ...32dBmdBmdBmdBmdBm

RF to LO Isolation f

RF = 250kHz to 800MHz (Figure 1) f RF = 700MHz to 1200MHz (Figure 2) f RF = 1200MHz to 1700MHz (Figure 2) f RF = 1700MHz to 2500MHz (Figure 2)>61>49>46>43dBdBdBdB

2RF-2LO Output Spurious Product

(f RF = f LO + f IF /2)900MHz: f RF = 815MHz at ...12dBm, f IF = 170MHz

1900MHz: f

RF = 1815MHz at ...12dBm, f IF = 170MHz...66...59dBcdBc

3RF-3LO Output Spurious Product

(f RF = f LO + f IF /3)900MHz: f RF = 786.67MHz at ...12dBm, f IF = 170MHz

1900MHz: f

RF = 1786.67MHz at ...12dBm, f IF = 170MHz...83...58dBcdBc Input 1dB Compression RF = 10MHz to 500MHz (Figure 1)

RF = 900MHz (Figure 2)

RF = 1900MHz (Figure 2)10.510.1

6.2dBmdBmdBm

Note 3: Speci“ cations over the ...40°C to 85°C temperature range are assured by design, characterization and correlation with statistical pro cess control. Note 4: SSB Noise Figure measurements performed with a small-signal noise source and bandpass “ lter on RF input and no other RF signal applied. Downmixer Applications: (Test Circuits Shown in Figures 1 and 2) V CC = 5V, EN = High, T A = 25°C, P RF = -10dBm (-10dBm/tone for two-tone IIP3 tests, f = 200kHz), High-Side LO at -5dBm for 45MHz,

140MHz and 450MHz tests, Low-Side LO at -10dBm for 900MHz, 1900MHz an

d 2450MHz tests, unless otherwise noted. (Note 2, 3 and 4)

LT5512

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Supply Current vs Supply Voltage Shutdown Current vs Supply Voltage

Conv Gain, IIP3 and LO Leakage

vs RF Frequency (140MHz App)Conv Gain, IIP3 and NFvs LO Power (140MHz App)Conv Gain and IIP3vs Supply Voltage (140MHz App)

Conv Gain, IIP3 and LO Leakage

vs RF Frequency (450MHz App)

Conv Gain, IIP3 and NF

vs LO Power (450MHz App)Conv Gain and IIP3vs Supply Voltage (450MHz App)

TYPICAL DC PERFOR A CE CHARACTERISTICS

UW (Test Circuit Shown Figure 2)

TYPICAL AC PERFOR A CE CHARACTERISTICS

UW HF/VHF/UHF Downmixer Application V CC = 5V, EN = High, P RF = -10dBm (-10dBm/tone for 2-tone IIP3 tests, f = 200kHz), High-Side LO, P LO = -5dBm, unless otherwise noted. Test Circuit Shown in Figure 1.

SUPPLY VOLTAGE (V)4.5 5.5

5512 G01

4.755.05.25

SUPPLY CURRENT (mA)

60
59
58
57
56
55
54
53
52
51
50
T A = 85°C T A = 25°C T A = -40°C

SUPPLY VOLTAGE (V)5.5

5512 G02

4.755.05.254.5

SHUTDOWN CURRENT (µA)

10100
1 0.1 T A = 85°C T A = 25°C T A = -40°C

RF FREQUENCY (MHz)90 115 140 165

5512 G03

1900
G C , SSB NF (dB), IIP3 (dBm) 4

261014

8 1216

182022

-110

LO LEAKAGE (dBm)

-90 -100-80-60-40 -70 -50-30 -20-100 G C IIP3 LO-IF

IF = 10MHz

LO-RF -40°C

25°C

85°C

LO INPUT POWER (dBm)-110

G C , SSB NF (dB), IIP3 (dBm)

481216

-7 -5 -1-9 -3

5512 G04

120
22
18 14 10 6 2

SSB NF

T A = 25°C

RF = 140MHz

IF = 10MHz

G C IIP3

SUPPLY VOLTAGE (V)4.5 4.75 5 5.25

5512 G05

5.50 G C (dB), IIP3 (dBm) 4

261014

8 1216

182022

P LO = -5dBm

RF = 140MHz

IF = 10MHz

G C IIP3 -40°C

25°C

85°C

RF FREQUENCY (MHz)400 425 450 475

5512 G06

5000
G C , SSB NF (dB), IIP3 (dBm) 4

261014

8 1216

182022

-110

LO LEAKAGE (dBm)

-90 -100-80-60-40 -70 -50-30 -20-100 LO-IF LO-RF G C IIP3 -40°C

25°C

85°C

IF = 70MHz

LO INPUT POWER (dBm)-11 -7 -5-9 -3 -1

5512 G07

10 G C , SSB NF (dB), IIP3 (dBm) 4

261014

8 1216

182022

SSB NF

T A = 25°C

RF = 450MHz

IF = 70MHz

G C IIP3

SUPPLY VOLTAGE (V)4.5 4.75 5 5.25

5512 G08

5.50 G C (dB), IIP3 (dBm) 4

261014

8 1216

182022

G C IIP3 P LO = -5dBm

RF = 450MHz

IF = 70MHz

-40°C

25°C

85°C

LT5512

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TYPICAL PERFOR A CE CHARACTERISTICS

UW (1900MHz Downmixer Application) V CC = 5V, EN = High, T A = 25°C, 1900MHz RF input matching, P RF = ...10dBm (...10dBm/tone for 2-tone IIP3 tests, f = 200kHz),

Low-Side LO, P

LO = ...10dBm, IF output measured at 170MHz, unless otherwise noted. Test circuit shown in Figure 2.

Conv Gain, IIP3 and NF

vs RF Frequency

Conv Gain, IIP3 and NF

vs LO Input PowerOutput IF Power and Output IM3 vs RF Input Power (2 Input Tones)LO-IF and LO-RF Leakagevs LO Input Power

IF Output Power, 2RF-2LO and

3RF-3LO vs RF Input Power

2RF-2LO (Half-IF) Spur Level

vs LO Input Power3RF-3LO Spur Levelvs LO Input Power

RF FREQUENCY (MHz)17000

G C (dB), IIP3 (dBm)

SSB NF (dB)

26
810
1900

210018

5512 G09

4

1800 200012

1416
10 1113

141519

12 16 1718

SSB NF

T A = 25°C

IF = 170MHz

G C IIP3

LOW-SIDE LO

HIGH-SIDE LO

SUPPLY VOLTAGE (V)4.5 5.5

5512 G10

4.755.05.25

CONV GAIN (dB), IIP3 (dBm)

18 16 14 12 10 8 6 4 2 0 T A = -40°C T A = -40°CIIP3

CONV GAIN

T A = 85°C T A = 85°C T A = 25°C T A = 25°C

TEMPERATURE (°C)-50 -25 100

5512 G11

0255075

CONV GAIN (dB), IIP3 (dBm)

20 18 16 14 12 10 8 6 4 2 0 IIP3

CONV GAIN

LOW-SIDE LO

HIGH-SIDE LO

LOW-SIDE LO

HIGH-SIDE LO

LO INPUT POWER (dBm)-180

G C (dB), IIP3 (dBm)

SSB NF (dB)

26
81020
14 -14 -10-8

5512 G12

416
18 12 10 1113

141520

17 1218
19 16 -16 -12 -6-4-2

SSB NF

G C IIP3 -40°C

25°C

85°C

RF INPUT POWER (dBm/TONE)-21

P OUT , IM3 (dBm/TONE) 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -15-9-6

5512 G13

-18 -12-303 T A = 25°C T A = 85°C T A = 85°C P OUT IM3 T A = -40°C T A = -40°C T A = 25°C

LO INPUT POWER (dBm)-18

LO LEAKAGE (dBm)

-20 -25 -30 -35 -40 -45 -50 -55 -60 -10

5512 G14

-16-14-12-2-4-6-8 f LO = 1730MHz T A = 25°C LO-IF LO-RF

RF INPUT POWER (dBm)

IF OUTPUT POWER (dBm)

5512 G15

10 -10 -30 -50 -70 -90 -110 -22-16-10-7-19 -13-4-12 P OUT (RF = 1900MHz)

2RF-2LO

(RF = 1815MHz)

3RF-3LO

(RF = 1786.67MHz) T A = 25°C f LO = 1730MHz P LO = -10dBm

LO INPUT POWER (dBm)-18 -16 -12 -8 -4

SPUR LEVEL (dBm)

-2

5512 G16

-14-10-6 -50 -55 -60 -65 -70 -75 -80 -85 -90 P RF = -16dBm P RF = -10dBm T A = 25°C f LO = 1730MHz f RF = 1815MHz

LO INPUT POWER (dBm)-18 -16 -12 -8 -4

SPUR LEVEL (dBm)

-2

5512 G17

-14-10-6 -50 -55 -60 -65 -70 -75 -80 -85 -90 P RF = -16dBm P RF = -10dBm T A = 25°C f LO = 1730MHz f RF = 1786.67MHz

Conv Gain and IIP3

vs Supply VoltageConv Gain and IIP3 vs Temperature RF = 1900MHz, IF = 170MHz

LT5512

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PI FU CTIO S

UUU

BLOCK DIAGRA

W NC (Pins 1, 4, 8, 13, 16): Not connected internally. These pins should be grounded on the circuit board for improved

LO to RF and LO to IF isolation.

RF + , RF ... (Pins 2, 3): Differential Inputs for the RF Sig- nal. These pins must be driven with a differential signal. Each pin must be connected to a DC ground capable of sinking 15mA (30mA total). This DC bias return can be accomplished through the center-tap of a balun, or with shunt inductors. An impedance transformation is required to match the RF input to 50 (or 75). EN (Pin 5): Enable Pin. When the input voltage is higher than 3V, the mixer circuits supplied through Pins 6, 7, 10, and 11 are enabled. When the input voltage is less than

0.3V, all circuits are disabled. Typical enable pin input

current is 50
A for EN = 5V and 0
A when EN = 0V. V CC1 (Pin 6): Power Supply Pin for the LO Buffer Circuits. Typical current consumption is 22mA. This pin should be externally connected to the other V CC pins, and decoupled with 0.01
F and 1
F capacitors. V CC2 (Pin 7): Power Supply Pin for the Bias Circuits. Typical current consumption is 4mA. This pin should be externally connected to the other V CC pins, and decoupled with 0.01
F and 1
F capacitors. GND (Pins 9 and 12): Ground. These pins are internally connected to the backside ground for better isolation. They should be connected to RF ground on the circuit board, although they are not intended to replace the primary grounding through the backside contact of the package. IF ... , IF + (Pins 10, 11): Differential Outputs for the IF Signal. An impedance transformation may be required to match the outputs. These pins must be connected to V CC through impedance matching inductors, RF chokes or a transformer center-tap. LO ... , LO + (Pins 14, 15): Differential Inputs for the Local Oscillator Signal. They can also be driven single-ended by connecting one to an RF ground through a DC blocking capacitor. These pins are internally biased to 2V; thus, DC blocking capacitors are required. An impedance transfor- mation or matching resistor is required to match the LO input to 50 (or 75). GROUND (Pin 17): (Backside Contact): Circuit Ground Return for the Entire IC. This must be soldered to the printed circuit board ground plane. V CC1 V CC2 RF + RF- LO + LO-IF + IF- 2 17 9 10 11 12 3 15 14 67

5LINEAR

AMPLIFIER

HIGH-SPEED

LO BUFFER

BIASGND

GND

ENBACKSIDE

GROUND

DOUBLE-BALANCED

MIXER

5512 BD

15mA 15mA

LT5512

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TEST CIRCUITS

REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER C5, C6, C7 100pF 0402 Murata GRP1555C1H101J L1, L2 47nH 0402 Coilcraft 0402CS-47NX C1 0.01µF 0402 Murata GRP155R71C103K L3 See Table 0402 Toko LL1005-FH C2 1.0µF 0603 Taiyo Yuden LMK107F105ZA R1 10 0402 C4 See Table 0402 Murata GRP1555C T1 See Table Murata LDB21 Series

C3 See Table 0402 Murata GRP1555C T2 8:1 Mini-Circuits TC8-1REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER

R1 1000402 AAC CR05-101J C4 See Table 0402 AVX 0402 C1, C6, C7 0.01µF 0402 AVX 04023C103JAT L1, L2 See Table 0402 Toko LL1005-FH C2 1µF 0603 AVX 0603ZD105KAT T1 1:1 Coilcraft WBC1-1TL C3 1.8pF 0402 AVX 04025A1R8BAT T2 8:1 Mini-Circuits TC8-1 Figure 1. Test Schematic for HF/VHF/UHF Downmixer Applications Figure 2. Test Schematic for 900MHz to 2.5GHz Downmixer Applications IF OUT

0.1MHz TO 100MHz

5512 F01

LT551216 15 14 13

56 78
12 11 10 91234
NC NC GND GND EN EN 5V V CC1 V CC2 RF + RF-LO + LO- NC NC NCIF + IF- C4L1 L2T1 1:16 4 31
2RF IN LO IN -5dBm T2 8:11 3 2 46
C3

C1C6 C7

C2 V CC

4.5V TO 5.25V

R1

LT5512

RF INPUT MATCHING

RF(MHz) T1 L1, L2 C4

0.25 - 250 WBC4-4L --- 39pF

45 47nH 100pF

70 27nH 68pF

140 WBC1-1TL 12nH 33pF

240 6.8nH 18pF

380 5.6nH 12pF

450 4.7nH 10pF

IF OUT

5512 F02

LT55121617 15 14 13

56 78
12 11 10 91234
NC NC GND GND EN EN V CC1 V CC2 RF + RF-LO + LO- NC NC NCIF + IF- C4Z O = 72Ω

L = 2mm

Z O = 72Ω

L = 2mmT1

1 5 34
RF IN LO IN -10dBm T21 3 2 46
L1 L2L3 C5 C3

C1C6 C7

C2 V CC R1

LT5512

RF GND GND DC

ER = 4.40.018"

0.018"

0.062"

APPLICATION (MHz) T1 (MURATA) C4 L3 C3

900 RF/170 IF LDB21881M05C-001 3.9pF 22nH 6.8pF

1900 RF/170 IF LDB211G9010C-001 1.5pF 5.6nH 6.8pF

2450 RF/240 IF LDB212G4020C-001 1.2pF 4.7nH 3.3pF

LT5512

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APPLICATIO S I FOR ATIO

WUUU The LT5512 consists of a double-balanced mixer, RF buffer ampli“ er, high-speed limiting LO buffer and bias/enable circuits. The differential RF, LO and IF ports require simple external matching which allows the mixer to be used at very low frequencies, below 1MHz, or up to 3GHz. Low side or high side LO injection can be used. Two evaluation circuits are available. The HF/VHF/UHF evaluation circuit is shown in Figure 1 and the 900MHz to 2.5GHz evaluation circuit is shown in Figure 2. The corresponding demo board layouts are shown in Figures

10 and 11, respectively.

RF Input Port

A simpli“ ed schematic of the differential RF input is shown in Figure 3, with the associated external imped- ance matching elements for a 450MHz application. Each

RF input requires a low resistance DC return to ground capable of sinking 15mA. This can be accomplished with the center-tap of a balun as shown in Figure 3, or with bias chokes connected from Pins 2 and 3 to ground, if a differential RF input signal is available. The value of the bias chokes should be high enough to avoid reducing the input impedance at the frequency of interest.

Table 1 lists the differential input impedance and differen- tial re" ection coef“ cient between Pins 2 and 3 for several common RF frequencies. As shown in Figures 3 and 4, low-pass impedance matching is used to transform the differential input impedance up to the desired value for the balun input. The following example shows how to design the low-pass impedance transformation network for the RF input. From Table 1, the differential input impedance at 450MHz is 18.1 + j5.2. As shown in Figure 4, the 5.2 reactance is split, with one half on each side of the 18.1 load resistor. The matching network will consist of additional inductance in series with the internal inductance and a capacitor in parallel with the desired 50 source impedance. The ca- pacitance (C4) and inductance are calculated as follows. QRR C Q R SL S == = ==(/)- (/.)- . .1 50 18 1 1 1 328 4 1 328 2   .( ) , 450 50 94 10
12 2MHz pF use pF LL RQ L = ==

118 1 1 328

2 2 450

42 47..

 .( .MHz nH use nH=))

Table 1. RF Input Differential Impedance

Frequency

(MHz)Differential Input

ImpedanceDifferential S11

Mag Angle

10 18.2 + j0.14 0.467 179.6

44 18 + j0.26 0.470 178.6

240 18.1 + j2.8 0.471 172.6

450 18.1 + j5.2 0.473 166.3

950 18.7 + j11.3 0.479 150.8

1900 20.6 + j22.8 0.503 124.3

2150 21.4 + j26.5 0.512 116.9

2450 22.5 + j30.5 0.522 109.2

2700 24.1 + j34.7 0.530 101.7

5512 F03

L2

4.7nHL1

4.7nH 23

15mA15mA

C4 10pF V CC V BIAS 1:1 RF IN 50

LT5512

Figure 3. RF Input with External Matching

for a 450MHz Application 2 3 L1

L21/2 X

INT 1/2 X INT j2.6 j2.6 C4RS 50

RL 18.1

5512 F04

LT5512

Figure 4. 450MHz RF Input Matching

LT5512

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At high frequencies (greater than 900MHz), this same matching technique is used, but it is important to consider the IC"s input reactance when calculating the external induc- tance. As shown in Figure 2, the high-frequency evaluation board uses short (2mm) 72 microstrip lines to realize the required inductance, instead of chip inductors. External matching values for several frequencies, ranging from 45MHz to 2.45GHz are shown in Figures 1 and 2. Measured RF input return losses are plotted in Figure 5.

LO Input Port

The LO buffer amplifi er consists of high-speed limiting differential amplifi ers, designed to drive the mixer quad for high linearity. The LO + and LO - pins are designed for differential or single-ended drive. Both LO pins are inter- nally biased to 2V DC

.A simplifi ed schematic of the LO input is shown in Figure 6 with simple resistive matching and DC blocking capaci-tors. This is the preferred matching for LO frequencies below 1.5GHz. The internal (DC) resistance is 400. The

required LO drive at the IC is 150mV RMS (typical) which can come from a 50 source, or a higher impedance source such as PECL. The external matching resistor is required only to reduce the amplitude of the LO signal at the IC, although the input stage will tolerate 10dB of overdrive without signifi cant performance degradation. Resistive LO port matching is used on the low-frequency evaluation board (see Figure 1). Above 1.5GHz, the internal capacitance becomes signifi cant and reactive matching to 50 with a single series induc- tor and DC blocking capacitors is preferred. A schematic is shown in Figure 7. Table 2 lists the differential input

RF FREQUENCY (MHz)50-30

RF PORT RETURN LOSS (dB)

-10-50

100 1000 3000

5512 F05

-15 -20 -25

450MHz

900MHz

1900MHz140MHz

APPLICATIO S I FOR ATIO

WUUU

Figure 5. RF Input Return Loss

(140MHz, 450MHz, 900MHz and 1900MHz Matching)Table 2. LO Input Differential Impedance

Frequency

(MHz)Differential Input

ImpedanceDifferential S11

Mag Angle

750 263 + j172 0.766 -10.2

1000 213 + j178 0.760 -13.4

1250 175 + j173 0.752 -16.6

1500 146 + j164 0.743 -19.8

1750 125 + j153 0.733 -22.8

2000 108 + j142 0.722 -25.8

2250 95 + j131 0.709 -28.9

2500 86 + j122 0.695 -31.8

2750 78 + j133 0.68 -34.6

5512 F06

V CC LO IN -5dBm 15 142V
LO + LO -

LT5512200

R1

100
200

C6

0.01µF

C7

0.01µF

Figure 6. LO Input with Resistive Matching

5512 F07

V CC LO IN 50

-10dBm15 14 L3 C6 100pF
C7

100pF2V

LO + LO -

LT5512200
200

Figure 7. LO Input with Reactive Matching

LT5512

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Table 3. IF Output Differential Impedance (Parallel Equivalent)

Frequency

(MHz)Differential Output

ImpedanceDifferential S11

Mag Angle

10 396 II - j10k 0.766 0

70 394 II - j5445 0.775 ...1.1

170 393 II - j2112 0.774 ...2.8

240 392 II - j1507 0.773 ...3.9

450 387 II - j798 0.772 ...7.3

750 377 II - j478 0.768 ...12.2

860 371 II - j416 0.766 ...14.0

1000 363 II - j359 0.762 ...16.2

1250 363 II - j295 0.764 ...19.6

1500 346 II -j244 0.756 ...23.6

1900 317 II - j192 0.743 ...29.9

impedance and differential re" ection coef“ cient between the LO + and LO ... pins. This information can be used to compute the value of the series matching inductor, L3. Alternatively, Figure 8 shows measured LO input return loss versus frequency for various values of L3. Reactive LO port matching is used on the high-frequency evaluation board (see Figure 2).

IF Output Port

The differential IF outputs, IF

+ and IF ... , are internally con- nected to the collectors of the mixer switching transistors as shown in Figure 9. These outputs should be combined externally through an RF balun or 180° hybrid to achieve optimum performance. Both pins must be biased at the supply voltage, which can be applied through matching inductors (see Figure 2), or through the center-tap of an output transformer (see Figure 1). These pins are protected with ESD diodes; the diodes allow peak AC signal swing up to 1.3V above V CC . As shown in Table 3, the IF output differential impedance is approximately 390 in parallel with 0.44pF. A simple band-pass IF matching network suitable for wireless ap- plications is shown in Figure 9. Here, L1, L2 and C3 set the desired IF output frequency. The 390 differential output can then be applied directly to a differential “ lter, or an

8:1 balun for impedance transformation down to 50.

To achieve maximum linearity, C3 should be located as

APPLICATIO S I FOR ATIO

WUUU

FREQUENCY (MHz)

RETURN LOSS (dB)

1573 F08

0 -5 -10 -15 -20 -25 -30

0100020002500500 1500300035004000

4.7nH 5.6nH 6.8nH 8.2nH 10nH

Figure 8. Single-Ended LO Port Return Loss

vs Frequency for Various Values of L3 close as possible to the IF + /IF ... pins. Even small amounts of inductance in series with C3 (such as through a via) can signi“ cantly degrade IIP3. The value of C3 should be reduced by the value of internal capacitance (see Table 3). This matching network is simple and offers good selectivity for narrow band IF applications. For IF frequencies below 100MHz, the simplest IF matching technique is an 8:1 transformer connected across the IF pins as shown in Figure 1. DC bias to the IF + and IF ... pins is provided through the transformers center-tap. A small value IF capacitor (C3) improves the LO-IF leakage and attenuates the undesired image frequency. No inductors are required. 11 10

400
C3L1

L2 V CC IF + IF - TO

DIFFERENTIAL

FILTER OR

BALUN

5512 F09

LT5512

Figure 9. IF Output Equivalent Circuit

with Band-Pass Matching Elements

LT5512

11

5512fa

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-

tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

PACKAGE DESCRIPTIO

U

UF Package

16-Lead Plastic QFN (4mm × 4mm)

(Reference LTC DWG # 05-08-1692)

4.00 ± 0.10

(4 SIDES) NOTE:

1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)

2. ALL DIMENSIONS ARE IN MILLIMETERS

3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE

MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY S IDE

4. EXPOSED PAD SHALL BE SOLDER PLATED PIN 1

0.55 ± 0.20

1615
1

2BOTTOM VIEW"EXPOSED PAD

2.15 ± 0.10

(4-SIDES)0.75 ± 0.05R = 0.115 TYP

0.30 ± 0.05

0.65 BSC0.200 REF

0.00 - 0.05

(UF) QFN 0102

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

0.72 ±0.05

0.30 ±0.05

0.65 BCS

2.15 ± 0.05

(4 SIDES)

2.90 ± 0.05

4.35 ± 0.05

PACKAGE OUTLINE

LT5512

12

5512fa

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

(408) 432-1900  FAX: (408) 434-0507  www.linear.com LINEAR TECHNOLOGY CORPORATION 2005LT/LT 1005 REV A • PRINTED IN USA

PART NUMBER DESCRIPTION COMMENTS

Infrastructure

LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5514 Ultralow Distortion, IF Ampli“ er/ADC Driver with Digitally Controlled Gain850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50 Matching,

Single-Ended LO and RF Ports Operation

LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50 Matching,

Single-Ended LO and RF Ports Operation

LT5521 10MHz to 3700MHz High Linearity Upconverting Mixer24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO

Port Operation

LT5522 400MHz to 2.7GHz High Signal Level

Downconverting Mixer4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended

RF and LO Ports

LT5524 Low Power, Low Distortion ADC Driver with

Digitally Programmable Gain450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control

LT5525 High Linearity, Low Power Downconverting Mixer Single-Ended 50 RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I

CC = 28mA

LT5526 High Linearity, Low Power Downconverting Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I

CC = 28mA, ...65dBm LO-RF Leakage

LT5527 400MHz to 3.7GHz High Signal Level

Downconverting MixerSingle-Ended 50 RF and LO Ports, 23.5dBm IIP3 at 1.9GHz LT5528 1.5GHz to 2.4GHz High Linearity Direct I/Q Modulator21.8dBm OIP3 at 2GHz, ...159dBm/Hz Noise Floor, 50 Interface at all Ports

RELATED PARTS

APPLICATIO S I FOR ATIO

WUUU

Figure 11. High-Frequency Evaluation Board Layout

(DC478B)Figure 10. HF/VHF/UHF Evaluation Board Layout (DC933A) LO RF IF LO RF IF