[PDF] BZX84C2V4ET1 - Zener Voltage Regulators 250 mW SOT-23

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Semiconductor Components Industries, LLC, 2003

October, 2016 Rev. 101Publication Order Number:

BZX84C2V4ET1/D

BZX84CxxxET1G Series,

SZBZX84CxxxET1G Series

Zener Voltage Regulators

250 mW SOT23 Surface Mount

This series of Zener diodes is offered in the convenient, surface mount plastic SOT23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards.

Specification Features

€250 mW Rating on FR4 or FR5 Board €Zener Breakdown Voltage Range 2.4 V to 75 V €Package Designed for Optimal Automated Board Assembly

€Small Package Size for High Density Applications€ESD Rating of Class 3 (> 16 kV) per Human Body Model

€Peak Power 225 W (8 X 20 s) €SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and

PPAP Capable

€These Devices are PbFree and are RoHS Compliant

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V0

MAXIMUM RATINGS

RatingSymbolMaxUnit

Peak Power Dissipation @ 20 s (Note 1)

@ T L 25°C
P pk 225W

Total Power Dissipation on FR5 Board,

(Note 2) @ T A = 25°C

Derated above 25°C

Thermal Resistance, JunctiontoAmbient

P D R JA 250
2.0 500mW
mW/°C

°C/WTotal Power Dissipation on Alumina

Substrate, (Note 3) @ T

A = 25°C

Derated above 25°C

Thermal Resistance, JunctiontoAmbient

P D R JA 300
2.4 417mW
mW/°C

°C/W

Junction and Storage Temperature RangeT

J , T stg 65 to
+150°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 9.

2. FR5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.

Device Package Shipping

ORDERING INFORMATION

SOT23

CASE 318

STYLE 83

Cathode1

Anode

MARKING DIAGRAMwww.onsemi.com

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.

DEVICE MARKING INFORMATION

BZX84CxxxET1G SOT23

(PbFree)3,000 /

Tape & Reel1xxx M?

BZX84CxxxET3G SOT23

(PbFree)10,000 /

Tape & Reelxxx = Device Code

M = Date Code*

?= PbFree Package *Date Code orientation may vary depending up- on manufacturing location.(Note: Microdot may be in either location)

SZBZX84CxxxET1G SOT23

(PbFree)3,000 /

Tape & Reel

SZBZX84CxxxET3G SOT23

(PbFree)10,000 /

Tape & Reel

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com 2

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)

Symbol

Parameter

V Z

Reverse Zener Voltage @ I

ZT I ZT

Reverse Current

Z ZT

Maximum Zener Impedance @ I

ZT I R

Reverse Leakage Current @ V

R V R

Reverse Voltage

I F

Forward Current

V F

Forward Voltage @ I

F V Z

Maximum Temperature Coefficient of V

Z

CMax. Capacitance @ V

R = 0 and f = 1 MHz

Zener Voltage Regulator

I F VI I R I ZT V R V Z V F

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com 3

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)

Device*

Device

Marking

V Z1 (V) @I ZT1 =5mA (Note 4) Z ZT1 @ I ZT1 5 mA V Z2 (V) @I ZT2 =1 mA (Note 4) Z ZT2 @ I ZT2 1 mA V Z3 (V) @I ZT3 =20 mA (Note 4) Z ZT3 I ZT3 20 mA Max

Reverse

Leakage

Current

VZ (mV/k) @ I ZT1 =5 mA

C (pF)

V R = 0 f = 1 MHz

MinNomMaxMinMaxMinMax

V R (V)I R ?A@MinMax

Device*

Device

Marking

V Z1 Below @I ZT1 =2mA Z ZT1 Below @ I ZT1 2 mA V Z2 Below @I ZT2

0.1 mA

Z ZT2 Below @ I ZT4

0.5 mA

V Z3 Below @I ZT3 =10mA Z ZT3 Below @ I ZT3 10 mA Max

Reverse

Leakage

Current

VZ (mV/k) Below @ I ZT1 = 2 mA

C (pF)

@ V R = 0 f = 1 MHz

MinNomMaxMinMaxMinMax

V R (V)I R ?A@MinMax

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Zener voltage is measured with a pulse test current I

Z at an ambient temperature of 25°C * Include SZ-prefix devices where applicable.

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com 4

TYPICAL CHARACTERISTICS

VZ, TEMPERATURE COEFFICIENT (mV/ C)°

V Z , NOMINAL ZENER VOLTAGE (V)321012345678

12111098765432

Figure 1. Temperature Coefficients

(Temperature Range 55°C to +150°C)

TYPICAL T

C

VALUES

V Z @ I ZT

VZ, TEMPERATURE COEFFICIENT (mV/ C)°

100
10 1

10 100

V Z , NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range 55°C to +150°C) V Z @ I ZT 100
V Z , NOMINAL ZENER VOLTAGE

Figure 3. Effect of Zener Voltage on

Zener Impedance

101

ZZT, DYNAMIC IMPEDANCE ( )

1000
100
10 1 T J = 255C I Z(AC) = 0.1 I Z(DC) f = 1 kHz I Z = 1 mA 5 mA 20 mA V F , FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

IF, FORWARD CURRENT (mA)

1000
100
10 1

75 V (MMBZ5267BLT1)

91 V (MMBZ5270BLT1)

150°C75°C25°C0°C

TYPICAL T

C

VALUES

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com 5

TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100
V Z , NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance

1000
100
10 1 101

BIAS AT

50% OF V

Z NOM

0 V BIAS

1 V BIAS

12 V Z , ZENER VOLTAGE (V)100 10 1 0.1 0.01

1086420

T A = 25°C

IZ, ZENER CURRENT (mA)

V Z , ZENER VOLTAGE (V)100 10 1 0.1 0.01

10 30 50 70 90

IR, LEAKAGE CURRENT ( A)µ

90
V Z , NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Leakage Current

1000
100
10 1 0.1 0.01 0.001

0.0001

0.00001

80706050403020100

+150°C
+25°C

55°C

IZ, ZENER CURRENT (mA)

Figure 7. Zener Voltage versus Zener Current

(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) 100

Figure 9. 8 × 20 ?s Pulse Waveform

90
80
70
60
50
40
30
20 10

0020406080

t, TIME (s) t P t r

PULSE WIDTH (t

P ) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 s

HALF VALUE I

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