[PDF] BC807-16LT1 - General Purpose Transistor PNP Silicon





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BC807-16LT1 - General Purpose Transistor PNP Silicon

Junction and Storage Temperature. TJ Tstg. -55 to +150. °C. Stresses exceeding those listed in the Maximum Ratings table may damage the device.



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DATA SHEET

www.onsemi.com Semiconductor Components Industries, LLC, 1997

March, 2023 Rev. 17Publication Order Number:

BC80716LT1/D1

General Purpose

Transistors

PNP Silicon

BC807-16L, BC807-25L,

BC807-40L

Features

€S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and

PPAP Capable

€These Devices are PbFree, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

RatingSymbolValueUnit

Collector Emitter Voltage

VCEO 45V

Collector Base VoltageV

CBO 50V

Emitter Base VoltageV

EBO 6.0V

Collector Current ContinuousI

C

500mAdc

THERMAL CHARACTERISTICS

CharacteristicSymbolMaxUnit

Total Device Dissipation FR5 Board,

(Note 1) T A = 25°C

Derate above 25°C

P D 225
1.8mW mW/°C

Thermal Resistance,

JunctiontoAmbient (Note 1)R

JA

436°C/W

Total Device Dissipation Alumina

Substrate, (Note 1) T

A = 25°C

Derate above 25°C

P D 300
2.4mW mW/°CThermal Resistance,

JunctiontoAmbient (Note 2)R

JA

417°C/W

Junction and Storage TemperatureT

J , T stg

55 to +150°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. FR4 Board, 1 oz. Cu, 100mm

2

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.SOT23

CASE 318

STYLE 61

23COLLECTOR

3 1 BASE 2

EMITTER

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

15xx M?

5xx = Device Code

xx = A1, B1, or C

M = Date Code*

?=PbFree Package

MARKING DIAGRAM

(Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.

BC80716L, BC80725L, BC80740L

www.onsemi.com 2

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

SymbolMinTypMaxUnit

OFF CHARACTERISTICS

CollectorEmitter Breakdown Voltage

(I C = 10 mA) V (BR)CEO 45quotesdbs_dbs26.pdfusesText_32
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