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Academicyear 2021/2022

Coursesoffered bytheprogramme

GéniePhysique etMatériaux(GPM)

Semester(s): 7-8-9-10

Curriculaare organizedingroups ofcourses(Unités d'Enseignement(UE)), consistingof severalcourses(Eléments Constitutifs(EC)).An ECisa teachingmodule includinglectures(cours magistraux(CM)),tutorials (travauxdirigés (TD)),laboratorywork (travauxpratiques(TP)), projects (PR),conferences (CONF),personalwork (TA)andpossibly other pedagocialactivities (DIV).Someinternships (stages(ST))are compulsory

Commonlyused abbreviations

CM: Lectures

TD: Tutorials

TP: LaboratoryWork

CONF: Conferences

TA: PersonalWork

PR: Project

ST: Internship

DIV: Miscellaneous

20/09/2021Page1/ 81

INSARennes -GéniePhysique etMatériaux(GPM) :2020/2021- Semester(s):7-8-9-10 -Sommaire

CodeLibelle

GPM09-ALPApplicationsof lasersandphotonics

GPM09-ENERRenewableEnergy

GPM09-PRO-ALPApplicationsof lasersandphotonics (Professionalmanagement)

OffreFormation- Page1/ 1

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022

Semestre7

ParcoursFormation InitialeGPM

1GPM07-1MaterialsScience 111.00

GPM07-CRISOCrystallography3.00

GPM07-DRXOStructuralanalysis ofmaterialsby X-RAYscatteringand diffraction 3.00

GPM07-MECAOMechanicsand formingofmaterials 3.50

GPM07-TPMAOLABORATORY: MATERIALS11.50

2GPM07-2ElectronicDevices Technology19.00

GPM07-ELECOELECTRONICFUNCTIONS 4.00

GPM07-DISPOSemiconductordevices 3.50

GPM07-TPPEDOElectronicand opto.propertiesofSolid -baseddevices 1.50

3GPM07-3Scienceand Technology4.00

GPM07-MODO2.00

GPM07-PLANODesignof experimentsmethodology1.50

GPM07-CONFOConferences0.50

4HUM07Non-scientificsyllabus S76.00

HUM07-ANGLOEnglish2.00

HUM07-EICEntrepreneurshipand Innovation3.00

HUM07-IECInnovationet Entrepreneuriat(RIE)3.00

HUM07-EPSOSportand physicaleducation1.00

O= compulsary,C=in choice,F= optional

20/09/2021Page2/ 81

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022

CrystallographyGPM07-CRIS

Numberof hours:24.00 h3.00ECTS credit

CM: 12.00h,TD :12.00h

ReferenceTeacher(s) :CASTANYPhilippe

Objectives:

Understandingthe conceptsofcrystallography.

Content:

-Reminders ofgeometriccrystallography: directlattice,motif, reciprocallattice,Miller indices,close-packed

structuresand examplesofstructures.

-Stereographic projection:usein crystallography,representationof directionsandplanes, Wulffnet,operations

(anglemeasurement, rotations). -Symmetries incrystals:symmetry operationsandelements, pointgroups,crystal classes,crystalsystems, Bravaislattices, spacegroups,international tablesofcrystallography.

Bibliography:

-M. DeGraef,M.E. McHenry,Structureof materials,CambridgeUniversity Press(2007). -D. Swarzenbach,G.Chapuis, Cristallographie,PressesPolytechniques etUniversitairesRomandes, Lausanne (2006). -J.J. Rousseau,Cristallographiegeòomeòtrique etradiocristallographie,Dunod, Paris(2000).

Requirements:

Generalknowledge ofthestructure ofmaterials(bachelor level).

Organisation:

Alternationbetween presentationoftheoretical concepts(cours)and concreteapplications(TD)

Evaluation:

Two-hourswritten examination.

Target:

20/09/2021Page3/ 81

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022 Structuralanalysis ofmaterialsby X-RAYscatteringand diffractionGPM07-DRX

Numberof hours:27.00 h3.00ECTS credit

CM: 17.00h,TD :10.00h

ReferenceTeacher(s) :FILLONAmelie

Objectives:

Generalknowledge oftheinterference patternanddiffraction ofX-raysscattered bycrystals.

Basicsof radiocrystallographyXtechniques.

Materialscharacterization: frombulkproperties tothinfilm characterization. Toexplore possibilitiesavailablein Synchrotronsourcesand methods(Xand neutrons).

Content:

MrsA. Fillon'sintervention

Productionof X-rays.Fundamentalinteractions ofradiationwith matter.

Introductionto diffractiontheory.Basics ofX-rayscattering anddiffraction.From electronscatteringto structure

factors. Applicationsof X-raysdiffractionby crystals.Laboratorymethods: Lauemethod,powder diffraction,Debye Scherrerdiffraction, rotatingcrystalmethod, BraggBrentanogeometry.

Experimentalprocedures: identificationofcrystalline phasesandorientation, determinationoflattice parameters,

strain,grain size,phasecomposition, preferredorientation.

Fromstructure factorstomeasured intensities:kinematicversus dynamicdiffraction,multiplicity, polarisation

factor,Lorentz factor,absorptionand temperatureeffects.

MrO. Durand'sintervention

X-rayscattering onthinlayers.

X-raydiffraction andreflectometry:thickness measurements,microstructuralcharacterization, microstrains,strain

determinationby sin²_method. Examplesof concreteapplicationsfrom aprofessionalexperience achievedinan industriallaboratory.

Mr.D. Thiaudière'sintervention

Introductionto synchrotronradiationand itsproperties. Reviewabout synchrotronsources,methods anddevelopments.

Bibliography:

-C. ESNOUF,Caractérisationmicrostructurale desmatériaux,Presses polytechniquesetuniversitaires romandes

(2011) -L.V. AZAROF,Elementsof X-RayCrystallography,McGraw-Hill BookCompany,New-York, London(1968) -H.P. KLUG,L.E.ALEXANDER, X-RayDiffractionProcedures, J.Wileyand SonsInc.,New-York, London (1967,1974),ISBN 0.471.49369.4 -A. TAYLOR,X-RayMetallography, J.Wileyand SonsInc.,New-York, London(1961) -A. GUINIER,Théorieet Techniquedela Radiocristallographie,Dunod,Paris (1964) -J.P. EBERHART,Analysestructurale etchimiquedes matériaux,Dunod,Paris (1997),ISBN2.10.003367.0

-J. PROTAS,Diffractiondes Rayonnements:Introduction auxconceptset méthodes,Dunod,Paris (1999),ISBN

2.10.004144.4

-http://escher.epfl.ch/eCrystallography/

Requirements:

Basicconcepts ofcrystalsymmetry relatedtothe courseentitled"cristallography".

Organisation:

Evaluation:

2hours examinclassroom

Target:

20/09/2021Page4/ 81

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022

Mechanicsand formingofmaterials GPM07-MECA

Numberof hours:32.00 h3.50ECTS credit

CM: 24.00h,TD :8.00h

ReferenceTeacher(s) :FRANCILLETTEHenri

Objectives:

Tounderstand themechanicalbehaviour ofmetalsand theirformingusing theirstructuralcharacterization.

Content:

1.Structural defectsinmetals.

2.Mechanisms ofdeformation.

3.Elasticity, plasticity.

4.Relationships betweenstructuralcharacterization andmechanicalproperties.

5.Metals formingprocesses

Bibliography:

J.Philibert, A.Vignes,Y. Bréchet,P.Combrade, Métallurgie-du mineraiaumétal, Masson,Paris,1997, ISBN

2.225.82978.01.

J.Barralis, G.Maeder,Précis deMétallurgie,Nathan, Paris,1997,ISBN. 2.12.260121.6.

,, ,Traitédes matériaux,numéro20 :Sélectiondes matériauxetdes procédésdemise enoeuvre,Presses

Polytechniqueset UniversitairesRomandes,2001, ISBN-10:2880744733.

M.Colombié, Matériauxmétalliques: Propriétés,miseen formeetapplications industriellesdesmétaux et

alliages(2e éd.),Dunod,Usine-Nouvelle, 2012,ISBN: 978-2-10-057965-5.

Requirements:

Structuralmetallurgy.

Organisation:

20hrs

Evaluation:

2h examination.

Target:

20/09/2021Page5/ 81

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022

LABORATORY: MATERIALS1GPM07-TPMA

Numberof hours:32.00 h1.50ECTS credit

TP: 32.00h

ReferenceTeacher(s) :THIBONIsabelle

Objectives:

Thiscourse iscomposedof 4practicalworks tohelpstudents apprehendthermaltreatments andthe characterizationof materials.

Content:

Thetopics are:

MetallographyI: samplespreparation(mechanical polishing,electropolishing,chemical polishing)andoptical

observation(phase identificationforclassical microstructures). MetallographyII: opticalobservationof variousmicrostructures:eutectic, pertectic,montectic. Thermalanalysis: studyofa phasediagramthrough simplethermalanalysis, andphasetransformation withthe helpof differentialthermalanalysis (DTA).Thermodynamicalcalculus ofaphase diagram. Agehardening ofanaluminium alloy(hardnessmeasurement andtensileexperiment).

Bibliography:

-A. DESY,J. VIDTS,Traitéde métallurgiestructuralethéorique etappliquée,Dunod, Paris(1968).- L.

HABRAKEN,J.L. DEBROUWER,De FerriMetallographiaI, FundamentalsofMetallography, Presses

AcadémiquesEuropéennes, Bruxelles(1968)_- A.SCHRADER,A. ROSE,DeFerri MetallographiaII,Structures

ofSteels, VerlagStahleisenm.b.H., Düsseldorf(1966)_- R.F.MEHL,Atlas ofMicrostructuresof IndustrialAlloys,

MetalsHandbook, vol.7,A.S.M.(1972)_- J.PHILIBERT,A. VIGNES,Y.BRECHET, P.COMBRADE,Métallurgie duminerai aumatériau,Masson, Paris(1997)ISBN 2.225.82978.0_-A. TAYLOR,X-RayMetallography, J.Wiley andSons Inc.,New-York,London (1961)

Requirements:

Knowledgeof phasediagramsand thermodynamicsofmaterials. ESM05-MAT- Materials_SGM06-TH-Thermodynamics ofMaterials

Organisation:

4hper week.

Evaluation:

1report foreachtopic.

Target:

20/09/2021Page6/ 81

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022

ELECTRONICFUNCTIONS GPM07-ELEC

Numberof hours:63.00 h4.00ECTS credit

CM: 12.00h,PR :16.00h, TA:9.00 h,TD: 14.00h,TP :12.00h

ReferenceTeacher(s) :BOYERSoline

Objectives:

Froma basicknowledgeof theoperationof electroniccomponentsdeveloped during3SGMyear, theobjectiveof thiscourse isthestudy ofanalogelectronic functionsformeasurement andsignaltransmission.

Firstpart: analogelectronicfunctions forsignalgeneration andtransmission:study ofoscillators,phase locked

loopand classicsystemsfor signalmodulation Secondpart: Project(groupof 4students,8 weeks):Thisproject aimsatthe completedevelopmentof ananalog electronicssetup functionsformeasurement (Spectrumanalyzer,quartz balance,lock-inamplifier) orsignal transmission(Frequency synthesizer,amplitudeor frequencydemodulator)

Content:

Lecture1:Signal andspectrumanalysis (reminderofdifferent kindofelectrical signal,Fouriertransform, limitations

offast anddiscreteFourier transform) Lesson2: sinewaveoscillators (studyofthe oscillationconditions,high andlowfrequency circuits,studyof

nonlinearamplitude stability.Modelingof nonlinearities.Frequencyand amplitudestability.Quartz oscillator).

Lesson3: Amplitudemodulationand demodulation:spectrum,modulation circuitryanddemodulation. Applications:synchronous detection,spectrumanalyzer.

Lesson4: phaselockedloop: principle,phasecomparator andvoltagecontrolled oscillator,linearmodeling, and

applications.

Lesson5: FromQuartzto atomicclock

TP1:Bipolar transistoroscillator:differential amplifier,selectivefilter, sinewaveoscillator.

TP2:Voltage controlledoscillator.

TP3:Phase LockedLoop(PLL)

TP4:Amplitude modulation

Projecttopics:

Spectrumanalyzer, quartzbalance,lock-in amplifier,Frequencysynthesizer, amplitudedemodulator,frequency

demodulator

Bibliography:

1.Christophe More,Transmissionde signaux,Tec& Doc

2.Microelectronic circuits.A.D.SEDRA andK.C.SMITH, SaundersCollègePublishing.

3.Electronic principles,A.P.Malvino, D.J.Bates,Dunod

Requirements:

3SGM"Electronic circuits"module.

Organisation:

Theoryand exercisesduring6 weeks(2hours perweek)

3hours perweekpractical workorproject

Evaluation:

Two-hourwritten exam.

Markfor PracticalWork:one third-continuous appraisal(reportsdone inpairs);two thirds:projectevaluation

(demonstration,report, oraldefense)

Target:

20/09/2021Page7/ 81

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022

Semiconductordevices GPM07-DISP

Numberof hours:32.00 h3.50ECTS credit

CM: 18.00h,TD :14.00h

ReferenceTeacher(s) :FOLLIOTHerve

Objectives:

Basicsof theoperationalprinciple ofelectronicdevices.

Content:

Lesson1: Semiconductorphysics(Reminder), transportphenomenain semiconductors.

Lesson2: PNjunctiondiodes.

Lesson3: thebipolartransistor (NPN,PNP,Ebers-Moll equations,highfrequency properties). Lesson4: themetal-semiconductordiode (Schottkydiode). Lesson5: Metal-Insulator-Semiconductorstructures,charge transferdevices(CCD).

Lesson6: MOSFETdevices.

Bibliography:

-H. Mathieu,Physiquedes semiconducteursetdes composantsélectroniques.Masson 1997. -S.M.Sze, Physicsofsemiconductor Devices.2ndEd. A.Willey.Intersci. Publ.1981. -Donald A.Neamen,Semiconductor PhysicsAndDevices, 3rdEd,Mcgraw Hill2003.

Requirements:

Basicsof semiconductorandjunction physics.

Organisation:

Ahomework ofoneto twohoursper lessonhouris requested.

Evaluation:

Gradingis basedoncontinuous assessment(1/3rd)and finalassessment(2h writtenexam,2/3rd ofthegrade). Thecontinuous assessmentgradeitself isbasedon a1hwritten examanda personalworkin thecourseof the semester.

Target:

20/09/2021Page8/ 81

INSARENNES -GéniePhysique etMatériaux(GPM) :2021/2022 Electronicand opto.propertiesofSolid -baseddevices GPM07-TPPED

Numberof hours:32.00 h1.50ECTS credit

TP: 32.00h

ReferenceTeacher(s) :BERTRUNicolas

Objectives:

Familiarisationwith researchlaboratoryconditions overseverallong-duration practicalsessions:set up experimentson agiven subject,gather thenecessarydata, processandutilise theresultsand writeareport.

Content:

Themes:

-Electronic ParamagneticResonance,Ferromagnetic Resonance. -Ferroelectric behaviour. -Heterojunctions. -Optical absorptionofQuantum Wells.

Bibliography:

-Practical worklecturenotes (1ersemester). -H. MATHIEU,Physiquedes semiconducteursetdes composantsélectroniques,Masson (2007). -S.M. SZE,Physicsof SemiconductorDevices,Wiley-Interscience (2006). -M. BROUSSEAU,Physiquedu Solide:propriétés électroniques,Dunod(1997).

-C. KITTEL,J.DION, M.GICQUEL,B. VILQUIN,Physiquede l'étatsolide: coursetproblèmes, Dunod(2007).

Requirements:

Solid-statephysics.

Basicphysics ofsemiconductorsand junctions.

QuantumMechanics.

Organisation:

Preparationbefore eachsession:1 to2hours.

Evaluation:

Finalmark isbasedon:

-Work achieved. -Enthusiasm andinitiative.quotesdbs_dbs14.pdfusesText_20

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