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©2014 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron's production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an "AS IS" basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.|©2 14MicronTechnology,Inc.|MicronConfidential1PracticalApproachtoDeterminingSSDReliabilityToddMarquart,Ph.D,Fellow-MicronTechnologyAugust25,2 15

|©2 14MicronTechnology,Inc.|MicronConfidential2SomeInitialDefinitionsandAcronyms•TotalBytesWritten(TBW):▪Thisistheamountofdatatransferredbytthehost.Typicallybase1 .•LogicalorUserDensity:▪Thisisthetotalamountofdataausercanstoreonadriveatanygivenmoment.Typicallybase1 .•PhysicalDensity:▪Thetotalamountofstoragephysicallyonthedrive,typicallybase2.•WriteAmplification(WA):▪AmeasureofhowmuchdataisactuallywrittentotheSSDcomparedtowhatwasrequestedbythehost.•MeanTimeToFailure(MTTF):▪Thepositionparameteroftheexponentialdistributionbasedonthetimetofirstfailure.▪Theexponentialdistributionappliestofailuresthataretrulyrandom.▪MTBF(MeanTimeBetweenFailure):Onlyvalidforarepairablesystem.•AnnualizedFailureRate(AFR):▪Thefailureprobabilityin1year,constantforanexponentialdistribution.August25,2 15

|©2 14MicronTechnology,Inc.3ReliabilityStatistics300.20.40.60.8100.511.52Fraction Failingβ=0.1β=1.0β=4.0Multiples of η00.511.52Multiples of ηβ=0.1β=1.0β=4.000.511.52β=0.1β=1.0β=4.0Multiples of ηH(t):HazardFunction.f(t):ProbabilityDistributionFunction(PDF))()()(1)()(tStftFtftH=-=FunctionSurvivor S(t) :Where )(1)(=-=tStFdtdFtf=)(F(t):CumulativeDistributionFunction(CDF).

|©2 14MicronTechnology,Inc.4ReliabilityStatistics•Whatisit?▪Largefamilyofdistributionsthatcovertheentirelifeofmanyproducts.•Whatisitgoodfor?▪ManyfailuremodescanbedescribedwithorapproximatedbyaWeibulldistribution.ThelognormalisnotcoveredbytheWeibullfamily.TodistinguishWeibullfromlognormalrequiresatleast2 pointsofGOODdata.▪Workswellwithverysmallsamplesizes.Analysisispossiblewith1oreven failures.▪Goodstartingpointformostanalyses.Ifthedataisactuallylognormal,theWeibulldistributionwillgivemoreconservativeextrapolatedlifetimesmakingitasaferstartingpoint.▪Weakestlinkdistribution.•Whataretheparameters?▪ßistheshapeorslopeparameter.ItistheslopeofthelinewhenplottedonWeibullpaper.▪ß=1givestheexponentialdistribution.▪ηisthecharacteristiclifeorscaleparameter.Itisthetimeto63.2%failure.4•WeibullDistribution!!"#$$%&''()**+,--=βηttFexp1)(!!"#$$%&''()**+,-''()**+,=ββηβηttttfexp)(tttHβηβ##$%&&'(=)(

|©2 14MicronTechnology,Inc.5ReliabilityStatistics•Ingeneralitisadvantageoustoplotdistributionsonaxesthatgeneratestraightlinesinordertojudgethefitofthedata,examinesignsofcurvatureetc...5())))(1ln(ln(ln)ln()(11lnlntFßtßtF--=-=""#$%%&'-η!!"#$$%&''()**+,--=βηttFexp1)(WeibullCDF:Y=mX+b

|©2 14MicronTechnology,Inc.6ReliabilityStatistics•AplotoftheWeibullCDFgivesagood,intuitiveviewoftheproductlifetime.•ThesamereliabilitymechanismswilltendtohavethesameWeibullslopeevenwhenchangingfromonetechnodetoanother.6

|©2 14MicronTechnology,Inc.7ReliabilityStatistics•Historicalviewofoverallreliabilitylifetime.•Notmyfavoriteview.7EarlyLifeUsefulLifeEarlyWearoutEndofLifeWearout

|©2 14MicronTechnology,Inc.8AccelerationFactors•Accelerationfactorstakethefailuredistributionandmoveitparalleltotheoriginaldistribution.▪Achangeisslopetypicallyindicatesashiftinmechanism.•Typicallyitisusedtomovefailuredistributionsintotheregion(stressandsamplesize)ofinterest.815X

|©2 14MicronTechnology,Inc.|MicronConfidential9JEDECJESD218•FromJEDECJESD218,Section1:•"ThisstandarddefinesJEDECrequirementsforsolidstatedrives.Foreachdefinedclassofsolidstatedrive,thestandarddefinestheconditionsofuseandthecorrespondingenduranceverificationrequirements.Althoughenduranceistoberatedbaseduponthestandardconditionsofusefortheclass,thestandardalsosetsoutrequirementsforpossibleadditionaluseconditionsasagreedtobetweenmanufacturerandpurchaser.•Qualificationofasoli stat riv involv smanyfactorsb yon n uranc an r t ntion,sosuchqualificationisb yon th scop ofthisstan ar ,butthisstan ar issuffici ntforth n uranc an r t ntionpartofa riv qualification.Thisstandardappliestoindividualproductsandalsotoqualificationfamiliesasdefinedinthisstandard.•Thescopeofthisstandardincludessolidstatedrivesbasedonsolid-statenon-volatilememory(NVM).NANDFlashmemoryisthemostcommonformonmemoryusedinsolidstatedrivesatthetimeofthiswriting,andthisstandardemphasizescertainfeaturesofNAND.ThestandardisalsointendedtoapplytootherformsofNVM."August25,2 15

|©2 14MicronTechnology,Inc.|MicronConfidential10JESD218-Testing•JESD218,isreallyaboutvalidatingthatthedrivecanmeetitsendurancespecification,includingpostTBWdataretention.August25,2 15RDTTBWQual(JESD218)Cycle-to-DeathTesting

|©2 14MicronTechnology,Inc.|MicronConfidential11JESD218Requirements•ThegeneralrequirementsforanSSDareshownhere,asperJESD218.▪2Classesaredefined,ClientandEnterprise.August25,2 15

|©2 14MicronTechnology,Inc.12FunctionalFailureRate•FFRisdominatedbydefectivityrelatedissues.•Singlepages,wordlines,blockscanfailascanentiredie.▪Insomecasesfailurescanbegraceful,notresultingindataloss,othersarecatastrophic.P.Muroke,ProcIRPS,2 6

|©2 14MicronTechnology,Inc.|MicronConfidential13FunctionalFailureRate•Thesearetypicallythedefectrelatedfailures.▪DefectiveNAND,controllerfailuresetc...•ThisisrelatedtotheMTTF/AFRofthedrive.▪MostdrivesspecifytheAFR/MTTFofadrivethatmaynotalignwiththeJEDECspecification.•InmostcasesitisthepurposeoftheReliabilityDemonstrationTest(RDT)todemonstratetheMTTF.August25,2 15

|©2 14MicronTechnology,Inc.14FunctionalFailureRate-SampleSizeAugust25,2 15

|©2 14MicronTechnology,Inc.15FunctionalFailureRateandRDT•TheFFRatthemaxTBWgivesanestimateoftheaverageAFRovertheproductlifetime,butmaynotrepresentthefalloutinthefirstyear.▪Forapurelyexponentialdistribution,thenumberswillbethesame,however,inthenon-exponentialcaseitwillnotalign.August25,2 15JEDECRegionRDTRegion

|©2 14MicronTechnology,Inc.|MicronConfidential16UBER-UncorrectableBitErrorRate•FromJEDECJESD218August25,2 15

|©2 14MicronTechnology,Inc.17UBERandFailProbability•UBERisrelatedtothefailureprobabilityofacodeword.▪Thethirdpieceoftheequationbelowisessentiallyausagemodel.August25,2 15()()()()()111111__sec______sec______sec________sec____sec_+⋅⋅=""#$%%&'+⋅⋅=""#$%%&'+⋅⋅⋅⋅⋅⋅=""#$%%&'+⋅⋅⋅⋅⋅⋅=""#$%%&'+⋅=WANNNtFWANNNtFWANNNNNNNtFWANNNNNNNtFWANNNDRUBERcyclescwpertorscwperbitscodewordcyclescwperbitscwpertorscodewordcyclescwperbitsdrivespercodewordsdrivescwpertorsdrivepercodewordsdrivescodewordcyclescwperbitsdrivespercodewordsdrivescwpertorsdrivepercodewordsdrivescodewordcyclessampleinbitstorsfailingSSDInstantaneousUBERUsageModel

|©2 14MicronTechnology,Inc.18FlashMemoryReliability-UBERAugust25,2 15()()11__sec__+⋅⋅=WANNNtFDRUBERcyclescwpertorscwperbitscodewordSSD

|©2 14MicronTechnology,Inc.19UBERattheComponentvsDrive•ThedriveandcomponentUBERsmaynotbealignedforavarietyofreasons.▪TheusagemodelsthatfeedtheUBERcalculationsmaynotbealigned.▪Additionalerror-managementmaybepresentatthedrivelevel.▪RAID▪LDPCvsBCH▪DifferentECClevelsAugust25,2 15August25,2 15-2-1012345610-410-310-2Vt (V)ProbabilityL0L1L2L310-310-210-110-1610-1410-1210-1010-810-610-4RBERUBER HRER ≈ 3.0e-03HRER ≈ 3.0e-04NumberoferrorsinaCodewordCorrectionProbability 1BCHTypeCodesLDPCTypeCodesKhayat,P.R.et.al.,IMC,2 15

|©2 14MicronTechnology,Inc.20SampleSizeandUBERAugust25,2 15

|©2 14MicronTechnology,Inc.21HighTemperatureDataRetention•Shifts▪Detrappingofelectrons.▪Causestheentiredistributiontoshiftandwiden.▪Theshiftisoftheentirepopulation,theshiftbybitishighlyvariable.e-

e- e- e- e- e- e- e- e- e- e- e- e- e-

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|©2 14MicronTechnology,Inc.22FlashMemoryReliability-HighTemperatureDataRetention•Highlytemperatureaccelerated.▪Eaof~1.1eV•Verysensitivetocyclingspeed.▪HigherspeedallowsforlessdetrappingbetweencyclesandmakesHTDRBworse.•Verysensitivetocyclingtemperature.▪HighertemperatureallowsmoredetrappingbetweencyclessoHTDRgetsbetterwithhighercyclingtemp.•HTDRissomewhatfielddependent.▪ThisimpliesL3willmovemorethanL2orL1,buttheimpactisnotnearlyasstrongasseeninroomtemperaturedataretention.N.Mielkeet.al.,Proc.44th

AnnualIRPS,2 6

|©2 14MicronTechnology,Inc.23DataRetentionCycTemp/Speed•ThephysicaleffectgoesbacktotheNANDhigh-temperaturedevicephysics.▪TheVtshiftisrelatedtodetrappingofelectronsfromthetunneloxide.•Ifthenumberoftrapsgeneratedisdependentprimarilyonelectronfluence,thenweneedtoonlycontroltrapoccupationdensityandensureitisequivalenttotheassumedfieldusagemodel.August25,2 15D v lopm nte-

e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e-

VtVtVtVte-

e- e- e- e- e- e- e- e- e- e- e- e- e- e- e-

|©2 14MicronTechnology,Inc.24FlashMemoryReliability-HighTemperatureDataRetention•Thecyclingtime/temperaturerelationshipassumesthattrapgenerationisessentiallytemperatureindependent,whileoccupancyisnot.•Inthatcase,thetotaltimeattemperatureduringcyclingdeterminestheoccupancy.▪Thegoalistogetthesameoccupancyunderacceleratedconditionsasunderusageconditions.▪ThetrapgenerationisthesamesincebothtargetthesamenumberofP/Ecycles(samefluencethroughthetox).•Forexample,assumepartsaretocycleinthefieldto5Kcyclesat55C24hrs/dayovera1yearperiod.•Iftheacceleratedtestwilloccurover5 hrs,theaccelerationfactorissimplytheratioofthetimes(365*24/5 =17.52).•UsingtheArrheniusequation,itispossibletocalculatethestresstemperaturerequiredtogetthislevelofdetrappingacceleration.August25,2 15CTTTTkEaAstressstressstressuse!81:Gives Tstressfor Solve15.273115.27355110617.81.1exp5002436511exp)detrap(5=!"#$%&''()**+,+-+⋅=⋅!"#$%&''()**+,-=-

|©2 14MicronTechnology,Inc.25SSDReliability-HighTemperatureDataRetention•Forhighlyacceleratedtesting(forexamplehighcyclingenterprisedrives),testingcanbedifficult.▪Forexample,foranenterprisedrivetobecycledin5 hoursorlessrequiresthetemperaturetobe>8 C.▪Thiscanbeanissueduetocomponenttemperaturelimitations,requiringlowertemperaturecycling.•Alsonotetheextremetemperaturesensitivity▪Thedifferencebetweencyclingover5 hoursandcyclingover4 hoursisonly2degrees.August25,2 15JEDECJESD218A

|©2 14MicronTechnology,Inc.26FlashMemoryReliability-HighTemperatureDataRetention•Itisimportanttonotethatthewidelyquoted1.1eVdoeshavesomeuncertaintyassociatedwithitispointedoutinJEDECJESD218:"AlthoughanSSDwouldbeexpectedtoreachitsTBWratingoveralifetimeofseveralyears,forthespecificpurposeofcalculatingTmaxthefullTBWisassumedtooccurwithinasingleyear.Thisisaconservativeassumptionbecauseashortertimeallowslessrelaxationbetweenwrites.Thisassumptionismadetoaddmarginagainstpossibleinaccuraciesinthe1.1eVaccelerationmodelforhightemperaturedataretention."JEDECJESD218

|©2 14MicronTechnology,Inc.27FlashMemoryReliability-DealingWithHTDR•Besidescontrollingusageconditions,insomecasesothertechniquesmaybeusedtominimizetheimpactofHTDR.•ThecaseshownheresuggestscompensatingfortheshiftbymovingtheVtdistributionsbackuptotheirinitialpositions.August25,2 15Y.Caiet.al.,ICCD,2 12

|©2 14MicronTechnology,Inc.28FlashMemoryReliability-LowTemperatureDataRetention•LeakageofelectronsfromtheFGthroughtrap-assisted-tunneling.▪ReferredtoasSILCorStress-Induced-Leakage-Currents.•Duringdataretentionthecellswilltendtomovetowardstheirlowestenergystate.▪Theexactsamemechanismisresponsibleforreaddisturb,buttendstogotheoppositedirection(chargegainvschargeloss).P.Cappellettiet.al.,2 4IEDM

|©2 14MicronTechnology,Inc.29FlashMemoryReliability-LowTemperatureDataRetention•VtTailFormation•Maindistributionremainsrelativelyunchanged.A.Hoefleret.al.,Proc.2 2IRPS,2 2

|©2 14MicronTechnology,Inc.30FlashMemoryReliability-LowTemperatureDataRetention•Besttotesttofailure,butmaybeimpractical.•Mayhavetoextrapolatetofailure.•Severalmodels.▪A.Hoefleret.al.,"StatisticalModelingoftheProgram/EraseCyclingAccelerationofLowTemperatureDataRetentioninFloatingGateNonvolatileMemories",Proc.IRPS,2 2▪H.Belgalet.al.,"ANewReliabilityModelforPost-CyclingChargeRetentionofFlashMemories",Proc.IRPS,2 2

|©2 14MicronTechnology,Inc.31FlashMemoryReliability-LowTemperatureDataRetention

|©2 14MicronTechnology,Inc.32FlashMemoryReliability-LowTemperatureDataRetention•LTDRisweaklytemperaturedependent(lowEa)•Stronglyfielddependent.▪VerysensitivetolevelwithhigherVt'smovingdownfaster.•Ingeneralextrapolationisrequiredtogetagoodestimateofthelifetime.•SimilartoHTDR,cyclingwilldegradeLTDR.H.Belgalet.al.,Proc.IRPS,2 2A.Hoefleret.al.,Proc.IRPS,2 2

|©2 14MicronTechnology,Inc.33LTDR-Extrapolation•Becauseofthelowactivationenergy,roomtemperaturedataretentiontypicallyrequiresextrapolation.•TheexampleshownhereusestheRBERtoextrapolatetoatargetvalue.▪Thetargetvalueshouldaccountforanynon-idealitiesinthepartotherwisetheestimateswillbeunrealistic.August25,2 15JEDECJESD218

|©2 14MicronTechnology,Inc.34UBEREventsvsFFREvents•Failsarenotcountedtwice.▪AdatalosseventcouldbeconsideredaUBEReventoranFFRevent.August25,2 157.1.2Cat gorizationoffailur sFailingSSDsaretobedividedintothreecategories:non-endurancefailures,endurancefunctionalfailures,andendurancedataerrors.Non-endurancefailuresaretobeexcludedfromconsiderationintheenduranceverificationbutmustofcoursebeconsideredifrelevanttootherpartsofdrivequalification.ThenumberoffunctionalfailuresistobeheldagainsttheFFRacceptancecriterion(equation2),andthenumberofdataerrorsistobeheldagainsttheUBERacceptancecriterion(equation3).Failuresaretobecategorizedasnon-endurancefailuresonlyifcompellingevidenceexiststhattheywerenotcausedbytheactofwritingthedrivetoitsendurancelimit,orbythesubsequentretentionstress.Failuresthatarenotinthecircuitpathofthewrittendata(forexample,failuresisolatedtopowersuppliesandcapacitors)maybeconsiderednon-endurancefailures.Failuresinthecircuitpathofthewrittendata,particularlythecontrollerandthenonvolatilememory,willmoreoftenbeconsideredendurancefailures,buttheremaybeexceptions.Failuresthatareinthecircuitpathofthewrittendatamaybeconsiderednon-endurancefailuresifthecauseofthefailurewereunrelatedtothequantityJEDECJESD218

|©2 14MicronTechnology,Inc.35WhatAboutEverythingElse?•JESD218providesagoodframeworkfordemonstratingthatanSSDmeetsitsdata-retentionrequirementsatthemaximumTBWrating.▪Thisisreallyjustatestofintrinsiccapabilityofthemedia.•Acomprehensivequalificationincludesmanyothertests,allofwhichcontributetotheunderstandingofthetotaldrivereliability.▪Anenterprisedrivemayhaveover1 componentsthatcouldcauseadrivetofailinthefield.August25,2 15ComprehensiveReliabilityPlanRDTOtherManufact.TestsOngoingTestingEndurance(JESD218)Mechanical4-CornersTest

|©2 14MicronTechnology,Inc.|MicronConfidential36CommentsonHistoricalHDDTesting•TestingforSSDsneedtobefocusedonSSDrelatedconcerns.•Teststhatarehistorical,butwerenotdevelopedforSSDsshouldbereviewedanddeterminediftheyapply.▪Theymayneedtobemodifiedorremovedinfavorofotherteststhatwillhelptrulyevaluatethequalityandreliabilityoftheproduct.▪Forexample,historical"altitude"testingforHDDsinvolveplacingtheHDDinalowpressurechamberduetoconcernsoftheheadnotbeingableto"float"abovethespinningmedia.▪Thisisagoodtestforthesetypesofmechanicalsystems,buthavenovalueonSSDs.•Resourcesandtimebetterspenttoinvestindevelopingnewtestandinvestinequipment/capabilitythatismeaningful.•AllSSDtesting/qualificationproceduresshouldbeunderconstantreviewtoensuretheproceduresevolveasrequired.August25,2 15

|©2 14MicronTechnology,Inc.37ReliabilityDemonstrationTest•ThepurposeofRDTistodemonstratethereliabilityoftheSSD.▪TypicallyspecifiedinMTTF.•Fixedsize/durationsampleplansfailtocomprehendthedifferenceinMTTFinmanycases.•Drivefamiliesshouldbedefinedinawaythatmakessense.August25,2 15

|©2 14MicronTechnology,Inc.|MicronConfidential38AccelerationFactors•Inordertosplitoutmechanisms,thedistributionsneedtoplottedonacommonaxis.•Thisrequiresapplicationoftheappropriateaccelerationfactors.•Accelerationfactorsareappliedbasedonthephysicsoffailure.•Startingpoint,generalrule-of-thumb▪NANDfailuresaretreatedas"TBWAccelerated"▪Hardwarefailuresaretreatedas"ThermallyAccelerated"▪Firmwarefailuresaretreatedasun-accelerated.August25,2 15

|©2 14MicronTechnology,Inc.|MicronConfidential39TBWAcceleration•IfNANDcyclingisexpectedtoaccelerateafailuremechanism,MicronusesaTBWaccelerationfactorwhenestimatingdrivelifetime.▪Theaccelerationfactorisbasedonthedatatransferrateintestversuswhatisexpectedinthefield.▪Althoughnotexplicitlycalledout,thisisembeddedintheJESD218methods•InsomecaseswewillgobeyondthespecifieddriveTBWinordertogetthebestfailuredistributions.▪Thetestsaredesignedtogeneratefailures(evenifthedrivemeetsspec),thisgivesbetterestimatesoftheAFR/MTTFaswellasvisibilityintofailuremechanismsaswellasreliabilitymargins.()()3210082.1175438002.1130:be ldfactor wouon accelerati the 5yrs,over 175TB of spec a with Hrs 1008in 130TB~ ing transferrdrive100G afor example,For 102210_/__/_12303012=⋅⋅⋅⋅=⋅⋅⋅⋅=⋅⋅⋅⋅=""#$%%&'⋅⋅⋅⋅⋅""#$%%&'⋅⋅⋅⋅==hrsTBhrsTBtWATBWtWATBWTBWAtWATBWtWATBWWATBWtDtDWATBWFieldHrCycNANDStressHrCycNANDTBWAstressfieldfieldfieldstressstressstressfieldfieldfieldstressstressfieldfieldfieldphysicalstressphysicalstressstress

|©2 14MicronTechnology,Inc.|MicronConfidential40ThermalAcceleration•Thermalaccelerationistypicallybasedonanactivationenergyof .7eV.•Theappropriateactivationenergydependsontheactualfailuremechanism,anddirectlymeasuredvalueswillgivethebestestimates.•Theliteratureandvariousspecificationscanalsoprovideguidance.FactoronAcceleratiTTkEkTEAkTEAttfttfaaaTT_11expexpexp212121=!"#$%&''()**+,-=''()**+,•''()**+,•=JEDECJEP122G

|©2 14MicronTechnology,Inc.|MicronConfidential41OtherAccelerationFactors•Accelerationfactorsforothertests(suchastempcycle,HASTetc...)shouldbereviewedtoensurethatthetestscanberelatedtofieldusageconditionsinordertoallowforriskanalysisaswellasensuringthetestsarealignedwithexpectations.D v lopm ntKuan-JungChunget.Al.,IMPACT,2 11

|©2 14MicronTechnology,Inc.42MechanicalTesting•TemperatureCycling▪Usedtoevaluatesolder-jointreliability.•HAST(HighlyAcceleratedStressTest)andTHP(TemperatureHumidityBias)▪Designedtoevaluatetheimpactofmoistureandtemperatureoncomponents.August25,2 15BabakArfaeiet.al.,ElectronicComp.&Tech.Conf.,2 14

|©2 14MicronTechnology,Inc.434-CornersTesting•4-Cornerstestingmeasuresthedrivecapabilityacrosstemperatureavoltagecorners.▪Shouldincludecross-temperaturereads.▪Normallytherearenooperationsduringthetemperaturetransitions.August25,2 15

|©2 14MicronTechnology,Inc.44OtherTests•Theremaybeadditionaltestsspecifictoparticularproductsormarkets.•Determiningmargintofailure,ratherthanpuresubstantiationtesting.August25,2 15

|©2 14MicronTechnology,Inc.45AdditionalTests•ManufacturingTests▪Examinationofmanufacturingtestsofmaterialgoingintoqualificationtests(andothertesting),isimportanttopickuplowerlevelissuesanddefectivitythatthelowersamplesizesofreliabilitytestingmaymiss.▪Burn-in(ifitexists)canprovideimportantinformationaboutunderlyingfailuredistributions.•OngoingTests▪Postqualificationitisimportanttomonitorthereliabilityofthesystemsinordertoensurethatitisnotshiftingdownoverthemanufacturinglifetime.August25,2 15

|©2 14MicronTechnology,Inc.46Comments/Conclusions•JESD218providesamethodforevaluatingenduranceunderspecificconditionsinauniformmanneracrosstheindustry.▪Thisisonly1portionofarobustqualificationstrategy.•SSDqualificationshouldincludeclear,statisticallymeaningfulteststhatcoverthelifetimeoftheproductunderrealisticconditions.▪SpecsbasedonHDDsmaynolongerbevalidduetowhattheyweremeanttodetectandshouldbereviewedwithacriticaleye.•ModelsaroundtestingconditionsneedtobeconstantlyevaluatedastheindustryseekstodesignSSDsclosertothemediacapability.August25,2 15

|©2 14MicronTechnology,Inc.47References•JEDECStandardJESD218A,"Solid-StateDrive(SSD)RequirementsandEnduranceTestMethod",September2 1 .•Muroke,P.,"FlashMemoryFieldFailureMechanisms",ReliabilityPhysicsSymposiumProceedings,2 6.•Khayat,P.R.,Kaynak,M.N.,Parthasarathy,S.,Tehrani,S.S.,"PerformanceCharacterizationofLDPCCodesforLarge-VolumeNANDFlashData",IEEEIMC,2 15.•Mielke,N.;Belgal,H.P.;Fazio,A.;Meng,Q.;Righos,N.,"RecoveryEffectsintheDistributedCyclingofFlashMemories",ReliabilityPhysicsSymposiumProceedings,2 6.•Cai,Yu;Yalcin,G.;Mutlu,O.;Haratsch,E.F.;Cristal,A.;Unsal,O.S.;KenMai,"Flashcorrect-and-refresh:Retention-awareerrormanagementforincreasedflashmemorylifetime",IEEE3 thInternationalConferenceonComputerDesign(ICCD),2 12.•Cappelletti,P.;Bez,R.;Modelli,A.;Visconti,A.,"Whatwehavelearnedonflashmemoryreliabilityinthelasttenyears",IEDMTechnicalDigest,2 4.•Hoefler,A.;Higman,J.M.;Harp,T.;Kuhn,P.J.,"Statisticalmodelingoftheprogram/erasecyclingaccelerationoflowtemperaturedataretentioninfloatinggatenonvolatilememories",ReliabilityPhysicsSymposiumProceedings,2 2.•Belgal,H.P.;Righos,N.;Kalastirsky,I.;Peterson,J.J.;Shiner,R.;Mielke,N.,"Anewreliabilitymodelforpost-cyclingchargeretentionofflashmemories",ReliabilityPhysicsSymposiumProceedings,2 2.•JEDECStandardJEP122G,"FailureMechanismsandModelsforSemiconductorDevices",October2 11•Kuan-JungChung;LiYuYang;Bing-YuWang;Chia-CheWu,"TheInvestigationofNodifiedNorris-LandzbergAccelerationModelsforReliabilityAssessmentofBallGridArrayPackages",5th

InternationalMicrosystemsPackagingAssemblyandCircuitsTechnologyConference(IMPACT),2 1 .•BabakArfaei;FrancisMutuku;KeithSweatman;Ning-ChengLee;EricCotts;RichardCoyle,"DependenceofSolderJointReliabilityonSolderVolumn,CompositionandPrintedCircuitBoardSurfaceFinish",ElectronicComponents&TechnologyConference,2 14.August25,2 15

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