[PDF] MPSW42 - One Watt High Voltage Transistor - Onsemi



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⬧ Semiconductor Components Industries, LLC, 2010

August, 2010 Rev. 71Publication Order Number:

MPSW42/D

MPSW42

One Watt High Voltage

Transistor

NPN Silicon

Features

€PbFree Packages are Available*

MAXIMUM RATINGS

RatingSymbolValueUnit

CollectorEmitter VoltageV

CEO

300Vdc

CollectorBase VoltageV

CBO

300Vdc

EmitterBase VoltageV

EBO

6.0Vdc

Collector Current ContinuousI

C

500mAdc

Total Device Dissipation @ T

A = 25°C

Derate above 25°CP

D 1.0 8.0W mW/°C

Total Device Dissipation @ T

C = 25°C

Derate above 25°CP

D2.5 20W mW/°C

Operating and Storage Junction

Temperature RangeT

J , T stg

55 to +150°C

THERMAL CHARACTERISTICS

CharacteristicSymbolMaxUnit

Thermal Resistance, JunctiontoAmbientR

?JA

125°C/W

Thermal Resistance, JunctiontoCaseR

?JC

50°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MPSW42RLRA TO92 2000/Tape & ReelMPSW42RLRAG TO92

(PbFree)2000/Tape & ReelDevice Package Shipping

MPSW42 TO92 5000 Units/Box

MPSW42G TO92

(PbFree)5000 Units/BoxMPSW42 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

?= PbFree Package (Note: Microdot may be in either location)

ORDERING INFORMATION

COLLECTOR

3 2 BASE 1

EMITTERMARKING DIAGRAM

MPS W42 AYWW? 1231
2

BENT LEAD

TAPE & REEL

AMMO PACKSTRAIGHT LEAD

BULK PACK

3TO92 1 WATT

(TO226)

CASE 2910

STYLE 1

MPSW42

http://onsemi.com 2

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted)

Characteristic

SymbolMinMaxUnit

OFF CHARACTERISTICS

CollectorEmitter Breakdown Voltage (Note 1)

(I C = 1.0 mAdc, I B = 0) V (BR)CEO

300Vdc

CollectorBase Breakdown Voltage

(I C = 100 Adc, I E = 0) V (BR)CBO

300Vdc

EmitterBase Breakdown Voltage

(I E = 100 Adc, I C = 0) V (BR)EBO

6.0Vdc

Collector Cutoff Current

(V CB = 200 Vdc, I E = 0) I CBO

0.1Adc

Emitter Cutoff Current

(V EB = 6.0 Vdc, I C = 0) I EBO

0.1Adc

ON CHARACTERISTICS

DC Current Gain

(I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 30 mAdc, V CE = 10 Vdc)quotesdbs_dbs4.pdfusesText_8