[PDF] NEAR-FIELD MEASUREMENT OF MICROWAVE ACTIVE DEVICES

1Introduction de Philippe EUDELINE - CRIANN

Introduction : La fiabilité des systèmes électroniques est un enjeu majeur pour les filières 1Introduction de Philippe EUDELINE Author: CUTULLIC

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Marcon 1, Karine Mourgues 1, Mohamed Ketata 1 and Philippe Eudeline 2 1University of Rouen 2THALES AIR SYSTEMS France 1 Introduction It is well recognized that excellent power performance and linearity can be achieved at low cost using Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field effect transistor In

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Marcon1, Karine Mourgues1, Mohamed Ketata1 and Philippe Eudeline2 1University of Rouen 2THALES AIR SYSTEMS France 1 Introduction It is well recognized that excellent power performance and linearity can be achieved at low cost using Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field effect transistor In

Realization of a Dedicated Bench for Reliability and

Wideband harmonically matched packaged GaN HEMTs with high

michel stanislawiak2, philippe eudeline2 and didier floriot3 This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band

A light-weight electromagnetic shield using high density

Study of electromagnetic field stress impact on SiGe

I INTRODUCTION A heterojunction bipolar transistor (HBT) has become a kaouther daoud, hichame maanane and philippe eudeline and simulated We have noticed a good accordance between

NEAR-FIELD MEASUREMENT OF MICROWAVE ACTIVE DEVICES

NEAR-FIELD MEASUREMENT OF MICROWAVE ACTIVE DEVICES D Gasquet5, L Nativel5, C Arcambal♦

2011 17th International Workshop on Thermal Investigations of

Poster introduction session 1 Chair : Marta Rencz, Budapest Univ of Technology and Economics, Hungary Hubert Polaert, Philippe Eudeline, Dan Borza, Abdelkhalak